Condition Monitoring of SiC MOSFETs Based on Gate-Leakage Current Estimation

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure

4H-SiC (0001) metal–oxide–semiconductor fieldeffect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall channels on the {112̄0} face, have been fabricated. The 3-D gate structures with a 1–5-μm width and a 0.8-μm height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition...

Temperature Sensitive Electrical Parameters for Condition Monitoring in SiC Power MOSFETs

This paper presents an analysis of the turn ON transient for SiC power MOSFETs and defines a Temperature Sensitive Electrical Parameter (TSEP) which is suitable for condition monitoring. The drain current switching rate dIDS/dt and its temperature dependency have been measured and analysed for commercially available 1.2 kV/10 A, 1.2 kV/24 A and 1.2 kV/42 A SiC MOSFETs from Wolfspeed showing tha...

TCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFET

Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has b...

Gate current modeling of high-k stack nanoscale MOSFETs

A unified approach, particularly suitable for evaluation of high-k stack structures, is presented. This approach is based on fully selfconsistent solutions to the Schrödinger and Poisson equations. Various structures and materials of high-k stacks of interest have been examined and compared to access the reduction of gate current in these structures. The present approach is capable of modeling ...